Two-dimensional layered semiconductor/graphene heterostructures for solar photovoltaic applications
Schottky barriers formed by graphene (monolayer, bilayer, and multilayer) on 2D layered semiconductor tungsten disulfide (WS 2 ) nanosheets are explored for solar energy harvesting. The characteristics of the graphene-WS 2 Schottky junction vary significantly with the number of graphene layers on WS...
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Veröffentlicht in: | Nanoscale 2014-01, Vol.6 (21), p.12682-12689 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Schottky barriers formed by graphene (monolayer, bilayer, and multilayer) on 2D layered semiconductor tungsten disulfide (WS
2
) nanosheets are explored for solar energy harvesting. The characteristics of the graphene-WS
2
Schottky junction vary significantly with the number of graphene layers on WS
2
, resulting in differences in solar cell performance. Compared with monolayer or stacked bilayer graphene, multilayer graphene helps in achieving improved solar cell performance due to superior electrical conductivity. The all-layered-material Schottky barrier solar cell employing WS
2
as a photoactive semiconductor exhibits efficient photon absorption in the visible spectral range, yielding 3.3% photoelectric conversion efficiency with multilayer graphene as the Schottky contact. Carrier transport at the graphene/WS
2
interface and the interfacial recombination process in the Schottky barrier solar cells are examined.
Schottky barriers formed by graphene (monolayer, bilayer, and multilayer) on 2D layered semiconductor tungsten disulfide (WS
2
) nanosheets are explored for solar energy harvesting. |
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ISSN: | 2040-3364 2040-3372 |
DOI: | 10.1039/c4nr03334e |