Topological states modulation of Bi and Sb thin films by atomic adsorption

Based on first-principles calculations, we systematically investigated the topological surface states of Bi and Sb thin films of 1-5 bilayers in (111) orientation without and with H(F) adsorption, respectively. We find that compared with clean Bi and Sb films, a huge band gap advantageous to observe the quantum spin Hall effect can be opened in chemically decorated bilayer Bi and Sb films, and the quantum phase transition from trivial (non-trivial) to non-trivial (trivial) phase is induced for a three bilayer Bi film and single (four) bilayer Sb film. Surface adsorption is an effective tool to manipulate the geometry, electronic structures and topological properties of film materials. Based on first-principles calculations, we systematically investigated the topological surface states of Bi and Sb thin films of 1-5 bilayers in (111) orientation without and with H(F) adsorption, respectively.