Rubicene: a molecular fragment of C 70 for use in organic field-effect transistors

Rubicene, a molecular fragment of C 70 , is a promising organic semiconductor material that displays excellent electronic characteristics for use in organic field-effect transistors (OFETs). Bottom-gate/bottom-contact polycrystalline thin-film OFETs using rubicene exhibit a saturation hole mobility...

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Veröffentlicht in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2014, Vol.2 (17), p.3361-3366
Hauptverfasser: Lee, Hyunbok, Zhang, Yue, Zhang, Lei, Mirabito, Timothy, Burnett, Edmund K., Trahan, Stefan, Mohebbi, Ali Reza, Mannsfeld, Stefan C. B., Wudl, Fred, Briseno, Alejandro L.
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Sprache:eng
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Zusammenfassung:Rubicene, a molecular fragment of C 70 , is a promising organic semiconductor material that displays excellent electronic characteristics for use in organic field-effect transistors (OFETs). Bottom-gate/bottom-contact polycrystalline thin-film OFETs using rubicene exhibit a saturation hole mobility of 0.20 cm 2 V −1 s −1 and a current on/off ratio ( I on / I off ) of 1.0 × 10 4 . In addition, the device performance can be improved with a mobility of 0.32 cm 2 V −1 s −1 and I on / I off of 2.5 × 10 4 with pentafluorobenzenethiol (PFBT) self-assembled monolayer (SAM) treatment on Au electrodes. To characterize the interfacial electronic structure and morphology of rubicene on Au and PFBT/Au, ultraviolet photoelectron spectroscopy (UPS), theoretical calculation with density functional theory (DFT) and grazing incidence X-ray diffraction (GIXD) were performed. With PFBT SAM treatment, the hole injection barrier from Au to rubicene is significantly decreased from 1.15 to 0.48 eV due to the formation of a large interface dipole on Au that increased its work function from 4.33 to 5.67 eV. Furthermore, PFBT SAM treatment also induces an “edge-on” configuration of rubicene, which can lead to the increase in carrier mobility. These results indicate that rubicene can serve as a benchmark organic semiconductor for model charge transport studies and in various organic electronic devices.
ISSN:2050-7526
2050-7534
DOI:10.1039/C3TC32117G