Probing the role of thermal vibrational disorder in the SPT of VO$$_2$$ by Raman spectroscopy
Phase competition in transition metal oxides has attracted remarkable interest for fundamental aspects and technological applications. Here, we report a concurrent study of the phase transitions in undoped and Cr-doped VO $$_2$$ 2 thin films. The structural, morphological and electrical properties o...
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Veröffentlicht in: | Scientific reports 2021-12, Vol.11 (1), Article 1620 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Phase competition in transition metal oxides has attracted remarkable interest for fundamental aspects and technological applications. Here, we report a concurrent study of the phase transitions in undoped and Cr-doped VO
$$_2$$
2
thin films. The structural, morphological and electrical properties of our films are examined and the microstructural effect on the metal–insulator transition (MIT) are highlighted. We further present a distinctive approach for analyzing the Raman data of undoped and Cr-doped VO
$$_2$$
2
thin films as a function of temperature, which are quantitatively correlated to the electrical measurements of VO
$$_2$$
2
films to give an insight into the coupling between the structural phase transition (SPT) and the MIT. These data are also combined with reported EXAFS measurements and a connection between the Raman intensities and the mean Debye–Waller factors
$$\sigma ^2$$
σ
2
is established. We found that the temperature dependence of the
$$\sigma _{R}^{2}(V-V)$$
σ
R
2
(
V
-
V
)
as calculated from the Raman intensity retraces the temperature profile of the
$$\sigma _{EXAFS}^{2}(V-V)$$
σ
EXAFS
2
(
V
-
V
)
as obtained from the EXAFS data analysis. Our findings provide an evidence on the critical role of the thermal vibrational disorder in the VO
$$_2$$
2
phase transitions. Our study demonstrates that correlating Raman data with EXAFS analysis, the lattice and electronic structural dynamics can be probed. |
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ISSN: | 2045-2322 2045-2322 |
DOI: | 10.1038/s41598-020-79758-1 |