Adduct-based p-doping of organic semiconductors

Electronic doping of organic semiconductors is essential for their usage in highly efficient optoelectronic devices. Although molecular and metal complex-based dopants have already enabled significant progress of devices based on organic semiconductors, there remains a need for clean, efficient and...

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Veröffentlicht in:Nature materials 2021-09, Vol.20 (9), p.1248-1254
Hauptverfasser: Sakai, Nobuya, Warren, Ross, Zhang, Fengyu, Nayak, Simantini, Liu, Junliang, Kesava, Sameer V., Lin, Yen-Hung, Biswal, Himansu S., Lin, Xin, Grovenor, Chris, Malinauskas, Tadas, Basu, Aniruddha, Anthopoulos, Thomas D., Getautis, Vytautas, Kahn, Antoine, Riede, Moritz, Nayak, Pabitra K., Snaith, Henry J.
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Sprache:eng
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Zusammenfassung:Electronic doping of organic semiconductors is essential for their usage in highly efficient optoelectronic devices. Although molecular and metal complex-based dopants have already enabled significant progress of devices based on organic semiconductors, there remains a need for clean, efficient and low-cost dopants if a widespread transition towards larger-area organic electronic devices is to occur. Here we report dimethyl sulfoxide adducts as p-dopants that fulfil these conditions for a range of organic semiconductors. These adduct-based dopants are compatible with both solution and vapour-phase processing. We explore the doping mechanism and use the knowledge we gain to ‘decouple’ the dopants from the choice of counterion. We demonstrate that asymmetric p-doping is possible using solution processing routes, and demonstrate its use in metal halide perovskite solar cells, organic thin-film transistors and organic light-emitting diodes, which showcases the versatility of this doping approach. Adducts of dimethyl sulfoxide and hydrobromic acid demonstrate efficient p-doping of various organic semiconductors and compatibility with other counterions used to improve stability and other performance parameters of organic-based optoelectronic devices.
ISSN:1476-1122
1476-4660
DOI:10.1038/s41563-021-00980-x