Control of Catalytic Reactions at the Surface of a Metal Oxide Nanowire by Manipulating Electron Density Inside It

We show that the rates and extent of oxidation and reduction reactions taking place at the surface of a SnO2 nanowire, configured as a field-effect transistor, can be modified by changing the electron density in the wire with a gate voltage.

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Bibliographische Detailangaben
Veröffentlicht in:	Nano letters 2004-03, Vol.4 (3), p.403-407
Hauptverfasser:	Zhang, Y, Kolmakov, A, Chretien, S, Metiu, H, Moskovits, M
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Field effect devices Materials science Nanoscale materials and structures: fabrication and characterization Physics Quantum wires Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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Beschreibung
Zusammenfassung:	We show that the rates and extent of oxidation and reduction reactions taking place at the surface of a SnO2 nanowire, configured as a field-effect transistor, can be modified by changing the electron density in the wire with a gate voltage.
ISSN:	1530-6984 1530-6992
DOI:	10.1021/nl034968f