Langmuir−Blodgett Film Deposition of Metallic Nanoparticles and Their Application to Electronic Memory Structures

The Langmuir−Blodgett deposition of organically passivated gold nanoparticles is reported. A monolayer of these particles has been incorporated into a metal−insulator−semiconductor (MIS) structure. The MIS device exhibits a hysteresis in its capacitance versus voltage characteristic, the magnitude o...

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Veröffentlicht in:	Nano letters 2003-04, Vol.3 (4), p.533-536
Hauptverfasser:	Paul, S, Pearson, C, Molloy, A, Cousins, M. A, Green, M, Kolliopoulou, S, Dimitrakis, P, Normand, P, Tsoukalas, D, Petty, M. C
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Magnetic and optical mass memories Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Storage and reproduction of information
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Beschreibung
Zusammenfassung:	The Langmuir−Blodgett deposition of organically passivated gold nanoparticles is reported. A monolayer of these particles has been incorporated into a metal−insulator−semiconductor (MIS) structure. The MIS device exhibits a hysteresis in its capacitance versus voltage characteristic, the magnitude of which is dependent on the voltage sweep conditions. Charge storage in the layer of nanoparticles is thought to be responsible for this effect.
ISSN:	1530-6984 1530-6992
DOI:	10.1021/nl034008t