Picosecond Electronic Relaxation in CdS/HgS/CdS Quantum Dot Quantum Well Semiconductor Nanoparticles

Subpicosecond photoexcitation of CdS/HgS/CdS quantum dot quantum well nanoparticles at wavelengths shorter than their interband absorption (390 nm) leads to a photobleach spectrum at longer wavelengths (440−740 nm). The photobleach spectrum changes and its maximum red-shifts with delay time. These r...

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Veröffentlicht in:Journal of physical chemistry (1952) 1996-04, Vol.100 (16), p.6381-6384
Hauptverfasser: Kamalov, Valey F, Little, Reginald, Logunov, Stephan L, El-Sayed, Mostafa A
Format: Artikel
Sprache:eng
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Zusammenfassung:Subpicosecond photoexcitation of CdS/HgS/CdS quantum dot quantum well nanoparticles at wavelengths shorter than their interband absorption (390 nm) leads to a photobleach spectrum at longer wavelengths (440−740 nm). The photobleach spectrum changes and its maximum red-shifts with delay time. These results are explained by the rapid quenching of the initially formed laser-excited excitons by two types of energy acceptors (traps); one is proposed to be due to CdS molecules at the CdS/HgS interface, and the other trap is that present in the CdS/HgS/CdS well. The results of the excitation at longer wavelengths as well as the formation and decay of the bleach spectrum at different wavelengths support this description.
ISSN:0022-3654
1541-5740
DOI:10.1021/jp953708m