Preparation and Characterization of Octadecanethiol Self-Assembled Monolayers on Indium Arsenide (100)

Self-assembled monolayers (SAMs) of octadecanethiol (ODT) on InAs(100) were prepared and characterized in detail. The native oxide of InAs was removed by a wet chemical etching method which allows formation of ODT SAMs on bare InAs(100) without any exposure to the ambient atmosphere. Contact angle m...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of physical chemistry. C 2009-10, Vol.113 (42), p.18331-18340
Hauptverfasser: Knoben, Wout, Brongersma, Sywert H, Crego-Calama, Mercedes
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Self-assembled monolayers (SAMs) of octadecanethiol (ODT) on InAs(100) were prepared and characterized in detail. The native oxide of InAs was removed by a wet chemical etching method which allows formation of ODT SAMs on bare InAs(100) without any exposure to the ambient atmosphere. Contact angle measurement, ellipsometry, Fourier transform infrared spectroscopy, and atomic force microscopy show that the resulting SAMs are smooth, continuous, and well ordered. X-ray photoelectron spectroscopy confirms bonding of ODT to the substrate as thiolate. When InAs-ODT is exposed to the ambient atmosphere, some reoxidation of the substrate takes place. Thermal stability studies demonstrate that ODT SAMs are completely stable up to 140 °C. Decomposition of ODT occurs above 250 °C.
ISSN:1932-7447
1932-7455
DOI:10.1021/jp9069543