Ambipolar Transport in Phase-Separated Thin Films of p- and n‑Type Vanadylporphyrazines with Two-Dimensional Percolation
Phase separation in thin films of organic p- and n-type semiconductors has attracted much attention for applications as bulk heterojunctions in organic photovoltaic devices and thin-film transistors (OTFTs). In the present study, we examined the structures, electronic states, and transistor performa...
Gespeichert in:
Veröffentlicht in: | Journal of physical chemistry. C 2014-07, Vol.118 (26), p.14142-14149 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Phase separation in thin films of organic p- and n-type semiconductors has attracted much attention for applications as bulk heterojunctions in organic photovoltaic devices and thin-film transistors (OTFTs). In the present study, we examined the structures, electronic states, and transistor performance of the codeposited thin films of p- and n-type porphyrazines, vanadylphthalocyanine (VOPc), and vanadyltetrakis(1,2,5-thiadiazole)porphyrazine with various mixing ratios. The transistors exhibited ambipolar performance, in which the p-type mobility increases with an increase in the VOPc ratio, and vice versa for the n-type mobility. This can be explained by a phase separation in these thin films. In addition, the mixing ratio dependence of the transistor parameters such as mobility and on/off ratio clearly indicated that the hole and electron carrier transports in the thin films are governed by the two-dimensional percolations of the p- and n-type semiconductor domains, respectively. We also fabricated electric-double-layer transistors of the codeposited thin films with ionic liquid gate dielectrics and found significant improvements in the mobility and threshold voltage and a high on/off ratio. The complementary inverters composed by these OTFTs worked in the first and third quadrants with a large signal gain over 10. |
---|---|
ISSN: | 1932-7447 1932-7455 |
DOI: | 10.1021/jp502056s |