Molecular Doping Control at a Topological Insulator Surface: F 4 -TCNQ on Bi 2 Se 3
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| Veröffentlicht in: | Journal of physical chemistry. C 2014-07, Vol.118 (27), p.14860-14865 |
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| container_end_page | 14865 |
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| container_issue | 27 |
| container_start_page | 14860 |
| container_title | Journal of physical chemistry. C |
| container_volume | 118 |
| creator | Wang, J. Hewitt, A. S. Kumar, R. Boltersdorf, J. Guan, T. Hunte, F. Maggard, P. A. Brom, J. E. Redwing, J. M. Dougherty, D. B. |
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| doi_str_mv | 10.1021/jp412690h |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 1932-7447 |
| ispartof | Journal of physical chemistry. C, 2014-07, Vol.118 (27), p.14860-14865 |
| issn | 1932-7447 1932-7455 |
| language | eng |
| recordid | cdi_crossref_primary_10_1021_jp412690h |
| source | ACS Publications |
| title | Molecular Doping Control at a Topological Insulator Surface: F 4 -TCNQ on Bi 2 Se 3 |
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