Band Gap Tunable N‑Type Molecules for Organic Field Effect Transistors
A series of four novel n-type molecules has been synthesized. Unlike previous approaches, the end group of these molecules was fixed and the molecular core was varied. The resulting materials were thoroughly analyzed. Electronic properties were derived from photoemission spectroscopy, optical proper...
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| Veröffentlicht in: | Journal of physical chemistry. C 2013-06, Vol.117 (22), p.11530-11539 |
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| container_end_page | 11539 |
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| container_issue | 22 |
| container_start_page | 11530 |
| container_title | Journal of physical chemistry. C |
| container_volume | 117 |
| creator | Glowatzki, H Sonar, P Singh, S. P Mak, A. M Sullivan, M. B Chen, W Wee, A. T. S Dodabalapur, A |
| description | A series of four novel n-type molecules has been synthesized. Unlike previous approaches, the end group of these molecules was fixed and the molecular core was varied. The resulting materials were thoroughly analyzed. Electronic properties were derived from photoemission spectroscopy, optical properties were derived with the help of optical spectroscopy, and the structure of thin films on Au(111) was derived by scanning tunneling microscopy (STM). In addition, prototypical organic field-effect transistors (OFETs) (forming n-channels in OFETs) have been fabricated and tested. The correlation between the device performance of the respective OFETs (i.e., electron mobility) and their electronic as well as structural properties was investigated. It turned out that a combination of beneficial electronic and structural properties provides the best results. These findings are important for the design of new materials for future device applications. |
| doi_str_mv | 10.1021/jp311092s |
| format | Article |
| fullrecord | <record><control><sourceid>acs_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1021_jp311092s</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>c599596194</sourcerecordid><originalsourceid>FETCH-LOGICAL-a289t-d11ce8dbaad005035a614a8dbcb9e6d2056aa07ca0eb33ba8f027c7bf432c0e03</originalsourceid><addsrcrecordid>eNptkD1Ow0AQhVcIJEKg4AbbUFAYZn_stUuI8oMUSGNqa7zeRbaMbe0kRTquwBU5CUZBoaGa0eibp_ceY9cC7gRIcd8MSgjIJJ2wiciUjIyO49Pjrs05uyBqAGIFQk3Y6hG7ii9x4Pmuw7J1_OXr4zPfD44_962zu9YR933gm_CGXW35onZtxefeO7vlecCOatr2gS7ZmceW3NXvnLLXxTyfraL1Zvk0e1hHKNNsG1VCWJdWJWI1egAVYyI0jgdbZi6pJMQJIhiL4EqlSkw9SGNN6bWSFhyoKbs96NrQEwXniyHU7xj2hYDip4LiWMHI3hzYAcli60e3tqbjgzQ61UbLPw4tFU2_C92Y4B-9b7UOaGE</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Band Gap Tunable N‑Type Molecules for Organic Field Effect Transistors</title><source>American Chemical Society Journals</source><creator>Glowatzki, H ; Sonar, P ; Singh, S. P ; Mak, A. M ; Sullivan, M. B ; Chen, W ; Wee, A. T. S ; Dodabalapur, A</creator><creatorcontrib>Glowatzki, H ; Sonar, P ; Singh, S. P ; Mak, A. M ; Sullivan, M. B ; Chen, W ; Wee, A. T. S ; Dodabalapur, A</creatorcontrib><description>A series of four novel n-type molecules has been synthesized. Unlike previous approaches, the end group of these molecules was fixed and the molecular core was varied. The resulting materials were thoroughly analyzed. Electronic properties were derived from photoemission spectroscopy, optical properties were derived with the help of optical spectroscopy, and the structure of thin films on Au(111) was derived by scanning tunneling microscopy (STM). In addition, prototypical organic field-effect transistors (OFETs) (forming n-channels in OFETs) have been fabricated and tested. The correlation between the device performance of the respective OFETs (i.e., electron mobility) and their electronic as well as structural properties was investigated. It turned out that a combination of beneficial electronic and structural properties provides the best results. These findings are important for the design of new materials for future device applications.</description><identifier>ISSN: 1932-7447</identifier><identifier>EISSN: 1932-7455</identifier><identifier>DOI: 10.1021/jp311092s</identifier><language>eng</language><publisher>Columbus, OH: American Chemical Society</publisher><subject>Applied sciences ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronics ; Exact sciences and technology ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of specific thin films ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Surface and interface electron states ; Transistors</subject><ispartof>Journal of physical chemistry. C, 2013-06, Vol.117 (22), p.11530-11539</ispartof><rights>Copyright © 2013 American Chemical Society</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a289t-d11ce8dbaad005035a614a8dbcb9e6d2056aa07ca0eb33ba8f027c7bf432c0e03</citedby><cites>FETCH-LOGICAL-a289t-d11ce8dbaad005035a614a8dbcb9e6d2056aa07ca0eb33ba8f027c7bf432c0e03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/jp311092s$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/jp311092s$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,780,784,2765,27076,27924,27925,56738,56788</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27484742$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Glowatzki, H</creatorcontrib><creatorcontrib>Sonar, P</creatorcontrib><creatorcontrib>Singh, S. P</creatorcontrib><creatorcontrib>Mak, A. M</creatorcontrib><creatorcontrib>Sullivan, M. B</creatorcontrib><creatorcontrib>Chen, W</creatorcontrib><creatorcontrib>Wee, A. T. S</creatorcontrib><creatorcontrib>Dodabalapur, A</creatorcontrib><title>Band Gap Tunable N‑Type Molecules for Organic Field Effect Transistors</title><title>Journal of physical chemistry. C</title><addtitle>J. Phys. Chem. C</addtitle><description>A series of four novel n-type molecules has been synthesized. Unlike previous approaches, the end group of these molecules was fixed and the molecular core was varied. The resulting materials were thoroughly analyzed. Electronic properties were derived from photoemission spectroscopy, optical properties were derived with the help of optical spectroscopy, and the structure of thin films on Au(111) was derived by scanning tunneling microscopy (STM). In addition, prototypical organic field-effect transistors (OFETs) (forming n-channels in OFETs) have been fabricated and tested. The correlation between the device performance of the respective OFETs (i.e., electron mobility) and their electronic as well as structural properties was investigated. It turned out that a combination of beneficial electronic and structural properties provides the best results. These findings are important for the design of new materials for future device applications.</description><subject>Applied sciences</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of specific thin films</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Surface and interface electron states</subject><subject>Transistors</subject><issn>1932-7447</issn><issn>1932-7455</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNptkD1Ow0AQhVcIJEKg4AbbUFAYZn_stUuI8oMUSGNqa7zeRbaMbe0kRTquwBU5CUZBoaGa0eibp_ceY9cC7gRIcd8MSgjIJJ2wiciUjIyO49Pjrs05uyBqAGIFQk3Y6hG7ii9x4Pmuw7J1_OXr4zPfD44_962zu9YR933gm_CGXW35onZtxefeO7vlecCOatr2gS7ZmceW3NXvnLLXxTyfraL1Zvk0e1hHKNNsG1VCWJdWJWI1egAVYyI0jgdbZi6pJMQJIhiL4EqlSkw9SGNN6bWSFhyoKbs96NrQEwXniyHU7xj2hYDip4LiWMHI3hzYAcli60e3tqbjgzQ61UbLPw4tFU2_C92Y4B-9b7UOaGE</recordid><startdate>20130606</startdate><enddate>20130606</enddate><creator>Glowatzki, H</creator><creator>Sonar, P</creator><creator>Singh, S. P</creator><creator>Mak, A. M</creator><creator>Sullivan, M. B</creator><creator>Chen, W</creator><creator>Wee, A. T. S</creator><creator>Dodabalapur, A</creator><general>American Chemical Society</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20130606</creationdate><title>Band Gap Tunable N‑Type Molecules for Organic Field Effect Transistors</title><author>Glowatzki, H ; Sonar, P ; Singh, S. P ; Mak, A. M ; Sullivan, M. B ; Chen, W ; Wee, A. T. S ; Dodabalapur, A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a289t-d11ce8dbaad005035a614a8dbcb9e6d2056aa07ca0eb33ba8f027c7bf432c0e03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Applied sciences</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of specific thin films</topic><topic>Physics</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Surface and interface electron states</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Glowatzki, H</creatorcontrib><creatorcontrib>Sonar, P</creatorcontrib><creatorcontrib>Singh, S. P</creatorcontrib><creatorcontrib>Mak, A. M</creatorcontrib><creatorcontrib>Sullivan, M. B</creatorcontrib><creatorcontrib>Chen, W</creatorcontrib><creatorcontrib>Wee, A. T. S</creatorcontrib><creatorcontrib>Dodabalapur, A</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Journal of physical chemistry. C</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Glowatzki, H</au><au>Sonar, P</au><au>Singh, S. P</au><au>Mak, A. M</au><au>Sullivan, M. B</au><au>Chen, W</au><au>Wee, A. T. S</au><au>Dodabalapur, A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Band Gap Tunable N‑Type Molecules for Organic Field Effect Transistors</atitle><jtitle>Journal of physical chemistry. C</jtitle><addtitle>J. Phys. Chem. C</addtitle><date>2013-06-06</date><risdate>2013</risdate><volume>117</volume><issue>22</issue><spage>11530</spage><epage>11539</epage><pages>11530-11539</pages><issn>1932-7447</issn><eissn>1932-7455</eissn><abstract>A series of four novel n-type molecules has been synthesized. Unlike previous approaches, the end group of these molecules was fixed and the molecular core was varied. The resulting materials were thoroughly analyzed. Electronic properties were derived from photoemission spectroscopy, optical properties were derived with the help of optical spectroscopy, and the structure of thin films on Au(111) was derived by scanning tunneling microscopy (STM). In addition, prototypical organic field-effect transistors (OFETs) (forming n-channels in OFETs) have been fabricated and tested. The correlation between the device performance of the respective OFETs (i.e., electron mobility) and their electronic as well as structural properties was investigated. It turned out that a combination of beneficial electronic and structural properties provides the best results. These findings are important for the design of new materials for future device applications.</abstract><cop>Columbus, OH</cop><pub>American Chemical Society</pub><doi>10.1021/jp311092s</doi><tpages>10</tpages></addata></record> |
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| ispartof | Journal of physical chemistry. C, 2013-06, Vol.117 (22), p.11530-11539 |
| issn | 1932-7447 1932-7455 |
| language | eng |
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| source | American Chemical Society Journals |
| subjects | Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronics Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Surface and interface electron states Transistors |
| title | Band Gap Tunable N‑Type Molecules for Organic Field Effect Transistors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T15%3A06%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-acs_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Band%20Gap%20Tunable%20N%E2%80%91Type%20Molecules%20for%20Organic%20Field%20Effect%20Transistors&rft.jtitle=Journal%20of%20physical%20chemistry.%20C&rft.au=Glowatzki,%20H&rft.date=2013-06-06&rft.volume=117&rft.issue=22&rft.spage=11530&rft.epage=11539&rft.pages=11530-11539&rft.issn=1932-7447&rft.eissn=1932-7455&rft_id=info:doi/10.1021/jp311092s&rft_dat=%3Cacs_cross%3Ec599596194%3C/acs_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |