Design and Synthesis of Porphyrin-Based Optoelectronic Gates
Two porphyrin-based optoelectronic gates and several prototypical redox-switching components of gates have been synthesized for studies in molecular photonics. Linear and T-shaped molecular optoelectronic gates contain a boron-dipyrrin (BDPY) dye as the input unit, a zinc (Zn) porphyrin as the trans...
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Veröffentlicht in: | Chemistry of materials 2001-03, Vol.13 (3), p.1023-1034 |
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Sprache: | eng |
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Zusammenfassung: | Two porphyrin-based optoelectronic gates and several prototypical redox-switching components of gates have been synthesized for studies in molecular photonics. Linear and T-shaped molecular optoelectronic gates contain a boron-dipyrrin (BDPY) dye as the input unit, a zinc (Zn) porphyrin as the transmission unit, a free base (Fb) porphyrin as the output unit, and a magnesium (Mg) porphyrin as the redox-switching unit. The linear gate and T gate were synthesized using a molecular building block approach. In the linear gate synthesis, a BDPY−Zn porphyrin dyad was coupled with a Fb porphyrin−Mg porphyrin dimer. The synthesis of the T gate utilized a Zn porphyrin bearing four different meso substituents: mesityl, 4-iodophenyl, 4-[2-(trimethylsilyl)ethynyl]phenyl, and 4-[2-triisopropyl)ethynyl]phenyl. Attachment of the three different groups to the Zn porphyrin was accomplished using successive Pd-mediated coupling reactions in the following sequence: Fb porphyrin (output unit), BDPY dye (input unit), and Mg porphyrin (redox-switching unit). Both the linear gate and T gate syntheses introduce the Mg porphyrin at the final step to minimize demetalation of the Mg porphyrin. Refinements to various components of these gates were investigated through the preparation of a ferrocene−porphyrin, a ferrocene−phthalocyanine, and a ferrocene−porphyrin−phthalocyanine. A dyad motif for studies of optically based redox switching was prepared that contains a derivative of Ru(bpy)3X2 coupled to a porphyrin. From these and related studies have emerged a number of design considerations for the development of refined optoelectronic gates. |
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ISSN: | 0897-4756 1520-5002 |
DOI: | 10.1021/cm000773m |