Mechanistic Role of H2O and the Ligand in the Chemical Vapor Deposition of Cu, Cu2O, CuO, and Cu3N from Bis(1,1,1,5,5,5-hexafluoropentane-2,4-dionato)copper(II)

Bibliographische Detailangaben

Veröffentlicht in:	Chemistry of materials 1995-08, Vol.7 (8), p.1589-1596
Hauptverfasser:	Pinkas, Jiri, Huffman, John C, Baxter, David V, Chisholm, Malcolm H, Caulton, Kenneth G
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Metals. Metallurgy Methods of deposition of films and coatings film growth and epitaxy Physics
Online-Zugang:	Volltext
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