Control of Morphology and Orientation of a Thin Film Tetrabenzoporphyrin (TBP) Organic Semiconductor by Solid-State Crystallization

The grain morphology of tetrabenzoporphyrin (TBP) after solid-state crystallization by annealing from tetrabicycloporphyrin (CP) was found to be influenced by the annealing temperature, but the grain orientation was not significantly changed by the temperature. From the thin film XRD measurements, the b axis, which is the most favorite direction to enhance the carrier mobility, was found to grow in parallel to the substrate, but at high temperatures, the growth direction was slightly inclined from the substrate surface. The FET performance showed dependency on the annealing temperatures, showing that the carrier mobility was three times higher for the film prepared at lower temperature compared to that at higher temperatures.