Modeling of Chemical Vapor Deposition of Large-Area Silicon Carbide Thin Film

A two-dimensional mathematical model of transport processes for the deposition of large-area silicon carbide thin film in a cylindrical vertical cold wall reactor is developed by considering transport of mass, momentum, and energy; gas-phase chemistry; and deposition of reacting species on the surface. The model is employed to simulate the polycrystalline 3C−SiC film (100 mm in diameter) deposition process in moderate- and near-atmospheric-pressure regimes, providing knowledge of the flow field, temperature, species concentration, and deposition profile. The effects of buoyancy force and substrate rotation on the flow pattern and the deposition rate are studied in two different reactor configurations: flat top reactor and cone top reactor. It is illustrated that the cone top geometry of the reactor can significantly modify the gas flow pattern and, subsequently, reduce the nonuniformity of the deposition rate. Simulations are performed for a wide range of processing parameters, including the deposition pressure and substrate rotation rate. Understanding of the relationship between processing conditions and the uniformity of the film thickness is achieved. Reactor geometry and processing conditions that favor the deposition of the uniform film are proposed.