Fabrication and Demonstration of III–V/Si Heterocore Microcavity Lasers via Ultrathin Interlayer Bonding and Dual Hard Mask Techniques

Heterogeneously integrated heterocore microcavity III–V semiconductor lasers on silicon-on-insulator (SOI) are fabricated and demonstrated in this paper. The heterocore microcavity is realized via ultrathin silicon dioxide interlayer bonding of III–V on SOI and dual hard mask technique. The dual har...

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Veröffentlicht in:ACS photonics 2016-11, Vol.3 (11), p.2191-2196
Hauptverfasser: Lee, Chee-Wei, Ng, Doris Keh-Ting, Tan, Ai Ling, Wang, Qian
Format: Artikel
Sprache:eng
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Zusammenfassung:Heterogeneously integrated heterocore microcavity III–V semiconductor lasers on silicon-on-insulator (SOI) are fabricated and demonstrated in this paper. The heterocore microcavity is realized via ultrathin silicon dioxide interlayer bonding of III–V on SOI and dual hard mask technique. The dual hard mask technique utilizes flowable oxide and silicon nitride as etch masks for III–V and SOI etchings, respectively, and hence, a single lithography is required in the fabrication. Compact optical-pumped heterocore microdisk lasers are demonstrated and their lasing performances are characterized.
ISSN:2330-4022
2330-4022
DOI:10.1021/acsphotonics.6b00794