Characteristics of GaN-on-Si Green Micro-LED for Wide Color Gamut Display and High-Speed Visible Light Communication

GaN green LEDs grown on the Si substrate are expected to become low-cost and high-efficiency green light sources in future years, thus promoting the potential of GaN-on-Si green micro-LEDs for display and visible light communication (VLC), but the performances of the GaN-on-Si green micro-LEDs have yet to be fully investigated. In terms of display, a nondestructive transfer printing process is adopted and the characteristics of GaN-on-Si green micro-LEDs before and after being transferred to the glass substrate are presented in this work. The removal of the Si substrate causes almost no electrical damage to the device, and at a low current density of 1 A/cm2, the EQE of the micro-LED can be doubled and the device can still maintain good color purity. In terms of VLC, a −3 dB bandwidth up to 613 MHz has been achieved for 80 μm micro-LED under the current density of 2 kA/cm2, and a data rate of 4.65 Gbps is obtained. These results indicate that GaN-on-Si green micro-LEDs have great application prospects in both display and communication fields.