Topological Phase Transition-Induced Triaxial Vector Magnetoresistance in (Bi 1-x In x ) 2 Se 3 Nanodevices

We report the study of a triaxial vector magnetoresistance (MR) in nonmagnetic (Bi In ) Se nanodevices at the composition of x = 0.08. We show a dumbbell-shaped in-plane negative MR up to room temperature as well as a large out-of-plane positive MR. MR at three directions is about in a -3%:-1%:225%...

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Veröffentlicht in:ACS nano 2018-02, Vol.12 (2), p.1537-1543
Hauptverfasser: Zhang, Minhao, Wang, Huaiqiang, Mu, Kejun, Wang, Pengdong, Niu, Wei, Zhang, Shuai, Xiao, Guiling, Chen, Yequan, Tong, Tong, Fu, Dongzhi, Wang, Xuefeng, Zhang, Haijun, Song, Fengqi, Miao, Feng, Sun, Zhe, Xia, Zhengcai, Wang, Xinran, Xu, Yongbing, Wang, Baigeng, Xing, Dingyu, Zhang, Rong
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Sprache:eng
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Zusammenfassung:We report the study of a triaxial vector magnetoresistance (MR) in nonmagnetic (Bi In ) Se nanodevices at the composition of x = 0.08. We show a dumbbell-shaped in-plane negative MR up to room temperature as well as a large out-of-plane positive MR. MR at three directions is about in a -3%:-1%:225% ratio at 2 K. Through both the thickness and composition-dependent magnetotransport measurements, we show that the in-plane negative MR is due to the topological phase transition enhanced intersurface coupling near the topological critical point. Our devices suggest the great potential for room-temperature spintronic applications in, for example, vector magnetic sensors.
ISSN:1936-0851
1936-086X
DOI:10.1021/acsnano.7b08054