Topological Phase Transition-Induced Triaxial Vector Magnetoresistance in (Bi 1-x In x ) 2 Se 3 Nanodevices
We report the study of a triaxial vector magnetoresistance (MR) in nonmagnetic (Bi In ) Se nanodevices at the composition of x = 0.08. We show a dumbbell-shaped in-plane negative MR up to room temperature as well as a large out-of-plane positive MR. MR at three directions is about in a -3%:-1%:225%...
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Veröffentlicht in: | ACS nano 2018-02, Vol.12 (2), p.1537-1543 |
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Hauptverfasser: | , , , , , , , , , , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We report the study of a triaxial vector magnetoresistance (MR) in nonmagnetic (Bi
In
)
Se
nanodevices at the composition of x = 0.08. We show a dumbbell-shaped in-plane negative MR up to room temperature as well as a large out-of-plane positive MR. MR at three directions is about in a -3%:-1%:225% ratio at 2 K. Through both the thickness and composition-dependent magnetotransport measurements, we show that the in-plane negative MR is due to the topological phase transition enhanced intersurface coupling near the topological critical point. Our devices suggest the great potential for room-temperature spintronic applications in, for example, vector magnetic sensors. |
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ISSN: | 1936-0851 1936-086X |
DOI: | 10.1021/acsnano.7b08054 |