Promoting a Weak Coupling of Monolayer MoSe 2 Grown on (100)-Faceted Au Foil

As a two-dimensional semiconductor with many physical properties, including, notably, layer-controlled electronic bandgap and coupled spin-valley degree of freedom, monolayer MoSe is a strong candidate material for next-generation opto- and valley-electronic devices. However, due to substrate effect...

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Veröffentlicht in:	ACS nano 2021-03, Vol.15 (3), p.4481-4489
Hauptverfasser:	Wu, Qilong, Fu, Xiaoshuai, Yang, Ke, Wu, Hongyu, Liu, Li, Zhang, Li, Tian, Yuan, Yin, Long-Jing, Huang, Wei-Qing, Zhang, Wen, Wong, Ping Kwan Johnny, Zhang, Lijie, Wee, Andrew T S, Qin, Zhihui
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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