More Than 9% Efficient ZnSeTe Quantum Dot-Based Blue Electroluminescent Devices

We explore both the synthesis of Cd-free blue quantum dots (QDs) with high-quality photoluminescence (PL) characteristics and the fabrication of high-efficiency QD light-emitting diodes (QLEDs). True blue (445 nm)-emissive, multishelled ZnSeTe QDs with a high PL quantum yield of 84% and a sharp band...

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Veröffentlicht in:ACS energy letters 2020-05, Vol.5 (5), p.1568-1576
Hauptverfasser: Han, Chang-Yeol, Lee, Sun-Hyoung, Song, Seung-Won, Yoon, Suk-Young, Jo, Jung-Ho, Jo, Dae-Yeon, Kim, Hyun-Min, Lee, Bum-Joo, Kim, Hyun-Sik, Yang, Heesun
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Sprache:eng
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Zusammenfassung:We explore both the synthesis of Cd-free blue quantum dots (QDs) with high-quality photoluminescence (PL) characteristics and the fabrication of high-efficiency QD light-emitting diodes (QLEDs). True blue (445 nm)-emissive, multishelled ZnSeTe QDs with a high PL quantum yield of 84% and a sharp bandwidth of 27 nm are prepared. To obtain a better electron transport layer (ETL) material, the surface of ZnMgO nanoparticles (NPs) is modified by additional Mg reaction, leading to the possible formation of a Mg­(OH)2 layer on the surface-modified ZnMgO (m-ZnMgO) NPs. The presence of a Mg­(OH)2 overlayer, the origin of the desirably reduced electron mobility, is supposedly responsible for the improved charge balance of the QD emissive layer (EML). The Mg­(OH)2 layer is further found to alleviate the emission quenching of the QD EML. Via combination of blue ZnSeTe QDs and m-ZnMgO NP ETL, highly bright, efficient blue QLEDs with the record luminance of 2904 cd/m2 and an external quantum efficiency of 9.5% are demonstrated.
ISSN:2380-8195
2380-8195
DOI:10.1021/acsenergylett.0c00638