Crystal Transformation of Cubic BN Nanoislands to Rhombohedral BN Sheets on AlN for Deep-UV Light-Emitting Diodes

Crystal Transformation of Cubic BN Nanoislands to Rhombohedral BN Sheets on AlN for Deep-UV Light-Emitting Diodes

The large bandgap and high p-type conductivity of sp2-bonded boron nitride (BN) make the compound very attractive for deep ultraviolet light-emitting diodes (DUV LEDs). However, integrating the promising sp2 material in the DUV LED structure is challenging. This is because the reported growth condit...

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Veröffentlicht in:ACS applied nano materials 2020-06, Vol.3 (6), p.5285-5290
Hauptverfasser: Huang, Chun-Pin, Rather, Muzafar Ahmad, Wu, Chien-Ting, Loganathan, Ravi, Ju, Ying-Hao, Lin, Kun-Lin, Chyi, Jen-Inn, Lai, Kun-Yu
Format: Artikel
Sprache:eng
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Zusammenfassung:The large bandgap and high p-type conductivity of sp2-bonded boron nitride (BN) make the compound very attractive for deep ultraviolet light-emitting diodes (DUV LEDs). However, integrating the promising sp2 material in the DUV LED structure is challenging. This is because the reported growth conditions for scalable high-quality BN, including the high substrate temperature (>1300 °C) and the low-temperature (
ISSN:2574-0970
2574-0970
DOI:10.1021/acsanm.0c00681