In Situ XPS Investigation of Transformations at Crystallographically Oriented MoS 2 Interfaces

Nanoscale transition-metal dichalcogenide (TMDC) materials, such as MoS , exhibit promising behavior in next-generation electronics and energy-storage devices. TMDCs have a highly anisotropic crystal structure, with edge sites and basal planes exhibiting different structural, chemical, and electronic properties. In virtually all applications, two-dimensional or bulk TMDCs must be interfaced with other materials (such as electrical contacts in a transistor). The presence of edge sites vs basal planes (i.e., the crystallographic orientation of the TMDC) could influence the chemical and electronic properties of these solid-state interfaces, but such effects are not well understood. Here, we use in situ X-ray photoelectron spectroscopy (XPS) to investigate how the crystallography and structure of MoS influence chemical transformations at solid-state interfaces with various other materials. MoS materials with controllably aligned crystal structures (horizontal vs vertical orientation of basal planes) were fabricated, and in situ XPS was carried out by sputter-depositing three different materials (Li, Ge, and Ag) onto MoS within an XPS instrument while periodically collecting photoelectron spectra; these deposited materials are of interest due to their application in electronic devices or energy storage. The results showed that Li reacts readily with both crystallographic orientations of MoS to form metallic Mo and Li S, while Ag showed very little chemical or electronic interaction with either type of MoS . In contrast, Ge showed significant chemical interactions with MoS basal planes, but only minor chemical changes were observed when Ge contacted MoS edge sites. These findings have implications for electronic transport and band alignment at these interfaces, which is of significant interest for a variety of applications.