Interfacial Properties of the SnO/κ-Ga 2 O 3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga 2 O 3

Interfacial Properties of the SnO/κ-Ga 2 O 3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga 2 O 3

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Veröffentlicht in:ACS applied materials & interfaces 2023-10, Vol.15 (39), p.45997-46009
Hauptverfasser: Rajabi Kalvani, Payam, Parisini, Antonella, Sozzi, Giovanna, Borelli, Carmine, Mazzolini, Piero, Bierwagen, Oliver, Vantaggio, Salvatore, Egbo, Kingsley, Bosi, Matteo, Seravalli, Luca, Fornari, Roberto
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container_title ACS applied materials & interfaces
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creator Rajabi Kalvani, Payam
Parisini, Antonella
Sozzi, Giovanna
Borelli, Carmine
Mazzolini, Piero
Bierwagen, Oliver
Vantaggio, Salvatore
Egbo, Kingsley
Bosi, Matteo
Seravalli, Luca
Fornari, Roberto
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doi_str_mv 10.1021/acsami.3c08841
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title Interfacial Properties of the SnO/κ-Ga 2 O 3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga 2 O 3
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