Enhanced Photoresponsivity UV-C Photodetectors Using a p-n Junction Based on Ultra-Wide-Band Gap Sn-Doped β-Ga 2 O 3 Microflake/MnO Quantum Dots

Enhanced Photoresponsivity UV-C Photodetectors Using a p-n Junction Based on Ultra-Wide-Band Gap Sn-Doped β-Ga 2 O 3 Microflake/MnO Quantum Dots

Solar-blind self-powered UV-C photodetectors suffer from low performance, while heterostructure-based devices require complex fabrication and lack p-type wide band gap semiconductors (WBGSs) operating in the UV-C region (

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Veröffentlicht in:ACS applied materials & interfaces 2023-03, Vol.15 (9), p.12127-12136
Hauptverfasser: Alwadai, Norah, Alharbi, Zohoor, Alreshidi, Fatimah, Mitra, Somak, Xin, Bin, Alamoudi, Hadeel, Upadhyaya, Kishor, Hedhili, Mohamed N, Roqan, Iman S
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Sprache:eng
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Zusammenfassung:Solar-blind self-powered UV-C photodetectors suffer from low performance, while heterostructure-based devices require complex fabrication and lack p-type wide band gap semiconductors (WBGSs) operating in the UV-C region (
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.2c18900