Dielectric Properties and Electrical Characteristics of a Triphenylamine Thin Film Deposited onto a Silicon Substrate via Spin Coating

This paper presents a complete analysis of the electrical and dielectric attributes of the Al/TPA/p-Si/Al device fabricated by the spin-coating method. In this study, a p-type silicon (p-Si) wafer measuring 1 in. × 1 in. was utilized as the substrate. A layer of organic triphenylamine (TPA) was deposited onto the p-Si wafer. The p-Si wafer itself had a thickness of 525 μm. The TPA layer, serving as the active material, was deposited to a thickness of 170 nm. Additionally, aluminum (Al) contacts were applied to the structure, with a thickness of 150 nm. The primary objective of the current study was to investigate the electrical and dielectric characteristics of the fabricated device, with a specific emphasis on their dependencies on frequency and voltage. The capacitance and conductance of this device were experimentally evaluated at ambient temperature over a frequency spectrum spanning from 50 to 700 kHz. The dielectric variables, including permittivity, dielectric loss, alternating-current conductance, and electrical modulus, were assessed through capacitance and conductance measurements, considering their frequency dependence. Furthermore, the device underwent impedance analysis, allowing for a comprehensive examination and interpretation of its resistive, inductive, and capacitive properties. In consideration of these findings, the goal is to thoroughly investigate the dielectric and electrical characteristics of the Al/TPA/p-Si/Al device. The aim is for an organic-layered device to make significant contributions to the development of electronic devices for diverse applications in the future.