A Review on Gallium Nitride for Liquid Sensors: Fabrications to Applications

Gallium nitride (GaN) exhibits high internal spontaneous and piezoelectric polarizations, leading to the formation of a two-dimensional electron gas (2DEG) channel in the heterojunctions. Additionally, its chemical stability, increased electron concentration, and high mobility contribute to its outs...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:ACS applied electronic materials 2024-05, Vol.6 (5), p.3062-3077
Hauptverfasser: Taha, Inas, Anjum, Dalaver H.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Gallium nitride (GaN) exhibits high internal spontaneous and piezoelectric polarizations, leading to the formation of a two-dimensional electron gas (2DEG) channel in the heterojunctions. Additionally, its chemical stability, increased electron concentration, and high mobility contribute to its outstanding performance in applications, such as liquid sensing (LS). In this article, we review the sensitivity and reactivity of the GaN surface with polar liquids and aqueous solutions. A comprehensive understanding of the interaction between the GaN surface and water molecules is presented. The results from a myriad of characterization techniques are discussed at great length to elucidate the correlation between the reduction of GaN conductivity and the dissociation of water, which plays a key role in water splitting (WS) and LS applications of GaN. Finally, we present valuable conclusions drawn from theoretical and experimental studies conducted to determine GaN–water interfacial properties.
ISSN:2637-6113
2637-6113
DOI:10.1021/acsaelm.4c00006