Interfacial-Mixing and Band Engineering Induced by Annealing of CdS and a-Ga 2 O 3 n–n-Type Thin-Film Heterojunction and Its Impact on Carrier Dynamics for High-Performance Solar-Blind Photodetection

Interfacial-Mixing and Band Engineering Induced by Annealing of CdS and a-Ga 2 O 3 n–n-Type Thin-Film Heterojunction and Its Impact on Carrier Dynamics for High-Performance Solar-Blind Photodetection

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Veröffentlicht in:ACS applied electronic materials 2023-07, Vol.5 (7), p.3798-3808
Hauptverfasser: Kaur, Damanpreet, Wadhwa, Riya, Nisika, Zhang, Yuchen, Kaswekar, Poojan Indrajeet, Qiao, Quinn, Sharma, Anju, Poliks, Mark D., Kumar, Mukesh
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container_title ACS applied electronic materials
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creator Kaur, Damanpreet
Wadhwa, Riya
Nisika
Zhang, Yuchen
Kaswekar, Poojan Indrajeet
Qiao, Quinn
Sharma, Anju
Poliks, Mark D.
Kumar, Mukesh
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doi_str_mv 10.1021/acsaelm.3c00527
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title Interfacial-Mixing and Band Engineering Induced by Annealing of CdS and a-Ga 2 O 3 n–n-Type Thin-Film Heterojunction and Its Impact on Carrier Dynamics for High-Performance Solar-Blind Photodetection
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