Large-Area and Transferred High-Quality Three-Dimensional Topological Insulator Bi 2-x Sb x Te 3-y Se y Ultrathin Film by Catalyst-Free Physical Vapor Deposition

Uniform and large-area synthesis of bulk insulating ultrathin films is an important subject toward applications of a surface of three-dimensional topological insulators (3D-TIs) in various electronic devices. Here we report epitaxial growth of bulk insulating three-dimensional topological insulator (3D-TI) Bi Sb Te Se (BSTS) ultrathin films, ranging from a few quintuple to several hundreds of layers, on mica in a large-area (1 cm ) via catalyst-free physical vapor deposition. These films can nondestructively be exfoliated using deionized water and transferred to various kinds of substrates as desired. The transferred BSTS thin films show good ambipolar characteristics as well as well-defined quantum oscillations arising from the topological surface states. The carrier mobility of 2500-5100 cm /(V s) is comparable to the high-quality bulk BSTS single crystal. Moreover, tunable electronic states from the massless to the massive Dirac fermion were observed with a decrease in the film thickness. Both the feasible large-area synthesis and the reliable film transfer process can promise that BSTS ultrathin films will pave a route to many applications of 3D-TIs.