Uniformity, Linearity, and Symmetry Enhancement in TiO x /MoS 2- x O x Based Analog RRAM via S-Vacancy Confined Nanofilament

Due to the stochastic formation of conductive filaments (CFs), analog resistive random-access memory (RRAM) struggles to simultaneously achieve low variability, high linearity, and symmetry in conductance tuning, thus complicating on-chip training and limiting versatility of RRAM based computing-in-memory (CIM) chips. In this study, we present a simple and effective approach using monolayer (ML) MoS as interlayer to control the CFs formation in TiO switching layer. The limited S-vacancies (S ) in MoS O interlayer can further confine the position, size, and quantity of CFs, resulting in a highly uniform and symmetrical switching behavior. The set and reset voltages ( and ) in TiO /MoS O based RRAM are symmetric, with cycle-to-cycle variations of 1.28% and 1.7%, respectively. Moreover, high conductance tuning linearity and 64-level switching capabilities are achieved, which facilitate high accuracy (93.02%) on-chip training. This method mitigates the device nonidealities of analog RRAM through S confined CFs, accelerating the development of RRAM based CIM chips.