Layer-Number-Dependent Magnetism in the Co-Doped van der Waals Ferromagnet Fe 3 GaTe 2

Recently, van der Waals (vdW) antiferromagnets have been proposed to be crucial for spintronics due to their favorable properties compared to ferromagnets, including robustness against magnetic perturbation and high frequencies of spin dynamics. High-performance and energy-efficient spin functionali...

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Veröffentlicht in:Nano letters 2024-04, Vol.24 (14), p.4141-4149
Hauptverfasser: Wang, Mingjie, Zhu, Kejia, Lei, Bin, Deng, Yazhou, Hu, Tao, Song, Dongsheng, Du, Haifeng, Tian, Mingliang, Xiang, Ziji, Wu, Tao, Chen, Xianhui
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Sprache:eng
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Zusammenfassung:Recently, van der Waals (vdW) antiferromagnets have been proposed to be crucial for spintronics due to their favorable properties compared to ferromagnets, including robustness against magnetic perturbation and high frequencies of spin dynamics. High-performance and energy-efficient spin functionalities often depend on the current-driven manipulation and detection of spin states, highlighting the significance of two-dimensional metallic antiferromagnets, which have not been much explored due to the lack of suitable materials. Here, we report a new metallic vdW antiferromagnet obtained from the ferromagnet Fe GaTe by cobalt (Co) doping. Through the layer-number-dependent Hall resistance and magnetoresistance measurements, an evident odd-even layer-number effect has been observed in its few-layered flakes, suggesting that it could host an A-type antiferromagnetic structure. This peculiar layer-number-dependent magnetism in Co-doped Fe GaTe helps unravel the complex magnetic structures in such doped vdW magnets, and our finding will enrich material candidates and spin functionalities for spintronic applications.
ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.3c05148