Layer-Number-Dependent Magnetism and Anomalous Hall Effect in van der Waals Ferromagnet Fe 5 GeTe 2

Realization of ferromagnetism in the two-dimensional (2D) van der Waals (vdW) crystals opens up a vital route to understand the magnetic ordering in the 2D limit and to design novel spintronics. Here, we report enriched layer-number-dependent magnetotransport properties in the vdW ferromagnet Fe GeT...

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Veröffentlicht in:Nano letters 2022-12, Vol.22 (24), p.9839-9846
Hauptverfasser: Deng, Yazhou, Xiang, Ziji, Lei, Bin, Zhu, Kejia, Mu, Haimen, Zhuo, Weizhuang, Hua, Xiangyu, Wang, Mingjie, Wang, Zhengfei, Wang, Guopeng, Tian, Mingliang, Chen, Xianhui
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Sprache:eng
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Zusammenfassung:Realization of ferromagnetism in the two-dimensional (2D) van der Waals (vdW) crystals opens up a vital route to understand the magnetic ordering in the 2D limit and to design novel spintronics. Here, we report enriched layer-number-dependent magnetotransport properties in the vdW ferromagnet Fe GeTe . By studying the magnetoresistance and anomalous Hall effect (AHE) in nanoflakes with thicknesses down to monolayer, we demonstrate that while the bulk crystals exhibit soft ferromagnetism with an in-plane magnetic anisotropy, hard ferromagnetism develops upon thinning, and a perpendicular eas -axis anisotropy is realized in bilayer flakes, which is accompanied by a pronounced enhancement of AHE because of extrinsic mechanisms. For the monolayer flakes, the hard ferromagnetism is replaced by spin-glass-like behavior, in accordance with the localization effect in the 2D limit. Our results highlight the thickness-based tunability of the magnetotransport properties in the atomically thin vdW magnets that promises engineering of high-performance spintronic devices.
ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.2c02696