High Carrier Mobility and Controllable Electronic Property of the h-BN/SnSe 2 Heterostructure
Building two-dimensional (2D) vertical van der Waals heterostructures (vdWHs) is one of the effective methods to regulate the properties of single 2D materials. In this paper, we stack the hexagonal boron nitride (h-BN) monolayer (ML) on the SnSe ML to construct the stable h-BN/SnSe vdWH, of which t...
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Veröffentlicht in: | Langmuir 2023-08, Vol.39 (31), p.10769-10778 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Building two-dimensional (2D) vertical van der Waals heterostructures (vdWHs) is one of the effective methods to regulate the properties of single 2D materials. In this paper, we stack the hexagonal boron nitride (h-BN) monolayer (ML) on the SnSe
ML to construct the stable h-BN/SnSe
vdWH, of which the crystal and electronic structures, together with the optical properties, are also analyzed by the first-principles calculations. The results show that the h-BN/SnSe
vdWH belongs to a type-I heterostructure with an indirect bandgap of 1.33 eV, in which the valence band maximum and conduction band minimum are both determined by the component SnSe
ML. Interestingly, the h-BN/SnSe
vdWH under the tensile strain or electric field undergoes the transitions both from type-I to type-II heterostructure and from the indirect to direct bandgap semiconductor. In addition, the carrier mobility of the h-BN/SnSe
heterostructure has a significant enhancement relative to that of the SnSe
ML, up to 10
cm
V
s
. Meanwhile, the h-BN/SnSe
heterostructure presents the superb optical absorption and unique type-II hyperbolic property. Our findings will broaden the potential applications of SnSe
ML and provide theoretical guidance for the related experimental studies. |
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ISSN: | 0743-7463 1520-5827 |
DOI: | 10.1021/acs.langmuir.3c00625 |