Ambipolar Seebeck Coefficient in MoS 2 /MoS 2 -MoO 2 Graded Composites by Junction Reciprocation

We fabricated radially transformed growth of MoS to MoS -MoO by the two-zone chemical vapor transport (CVT) technique. The idea to apply heat, i.e., hot junction ( ), on both the edges of the film has a distinct ambipolar Seebeck coefficient ( ) of -20 μVK with MoS as hot junction, and 69.5 μVK with MoS -MoO as hot junction. The positive at MoS -MoO indicates fast hole injection at a lower degree of interface Fermi-level pinning and large asymmetry at the junctions through low energy carrier scattering in the multiple potential barriers at the interfaces of each region. The decreased Θ around 5 K than MoS reveals the lattice softening due to reduced strength of chemical bonding at MoS -MoO . The report propounds the potential utilization of multiple potential barriers for thin film graded composites in thermoelectric applications.