Color Sensitive Response of Graphene/Graphene Quantum Dot Phototransistors

We present the fabrication and characterization of all-carbon phototransistors made of graphene three terminal devices, coated with atomically precise graphene quantum dots (GQD). Chemically synthesized GQDs are the light absorbing materials, while the underlying chemical vapor deposition (CVD)-grow...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of physical chemistry. C 2019-10, Vol.123 (43), p.26490-26497
Hauptverfasser: Fantuzzi, Paolo, Candini, Andrea, Chen, Qiang, Yao, Xuelin, Dumslaff, Tim, Mishra, Neeraj, Coletti, Camilla, Müllen, Klaus, Narita, Akimitsu, Affronte, Marco
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We present the fabrication and characterization of all-carbon phototransistors made of graphene three terminal devices, coated with atomically precise graphene quantum dots (GQD). Chemically synthesized GQDs are the light absorbing materials, while the underlying chemical vapor deposition (CVD)-grown graphene layer acts as the charge transporting channel. We investigated three types of GQDs with different sizes and edge structures, having distinct and characteristic optical absorption in the UV–vis range. The photoresponsivity exceeds 106 A/W for vanishingly small incident power (
ISSN:1932-7447
1932-7455
DOI:10.1021/acs.jpcc.9b05013