Visualization of Lithium Plating and Stripping via in Operando Transmission X‑ray Microscopy

Lithium dendrite growth dynamics on Cu surface is first visualized through a versatile and facile experimental cell by in operando transmission X-ray microscopy (TXM). Galvanostatic plating and stripping cycle(s) are applied on each cell. Upon plating/stripping at ∼1 mA cm–2, mossy lithium is clearl...

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Veröffentlicht in:Journal of physical chemistry. C 2017-04, Vol.121 (14), p.7761-7766
Hauptverfasser: Cheng, Ju-Hsiang, Assegie, Addisu Alemayehu, Huang, Chen-Jui, Lin, Ming-Hsien, Tripathi, Alok Mani, Wang, Chun-Chieh, Tang, Mau-Tsu, Song, Yen-Fang, Su, Wei-Nien, Hwang, Bing Joe
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Sprache:eng
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Zusammenfassung:Lithium dendrite growth dynamics on Cu surface is first visualized through a versatile and facile experimental cell by in operando transmission X-ray microscopy (TXM). Galvanostatic plating and stripping cycle(s) are applied on each cell. Upon plating/stripping at ∼1 mA cm–2, mossy lithium is clearly found growing and shrinking on the Cu surface as the application time increases. It is interesting to note that the aspect ratio (height/width) of deposited lithium has increased with charge passed during plating, indicating a faster growing from the base. In addition, the dendritic or mossy lithium has also been observed when various high current densities (25, 12.5, and 6.3 mA cm–2) are applied in different cycles, showing a severe dendritic lithium formation that could be induced by inhomogeneous current distribution. The clear structure of dead lithium is found after the cycling, which also shows a lower efficiency and higher hazard when a higher current density is applied. This work explores TXM as a useful tool for in operando dynamic visualization and quantitative measurement of lithium dendrite, which is difficult to achieve with ex situ measurements and other microscopy techniques. The understanding of the growth mechanism from TXM can be beneficial for the development of safe lithium ion and lithium metal batteries.
ISSN:1932-7447
1932-7455
DOI:10.1021/acs.jpcc.7b01414