A Simple Approach Low-Temperature Solution Process for Preparation of Bismuth-Doped ZnO Nanorods and Its Application in Hybrid Solar Cells

A simple low-temperature solution processed bismuth-doped ZnO nanorods (NRs) and poly­(3-hexylthiophene) (P3HT) were used as electron acceptor and donor, respectively, in a hybrid inorganic–organic photovoltaic system. Controlling Bi precursor concentration via solution processing (hydrothermal method) plays an important role in altering the morphology, structure, and intrinsic defects of ZnO NRs. Interstitial doping of Bi–Bi2O3 into ZnO (BiZO) NRs results in simultaneous improvement of the open circuit voltage and short circuit current density primarily due to prolonged charge carrier recombination lifetime, increased donor–acceptor interfacial areas with efficient exciton dissociation, and charge carrier mobility. As a result, the power conversion efficiency of the 2 wt % BiZO NRs-P3HT device was significantly enhanced by 55% compared with that of the pristine device. Overall, our study highlighted the immense potential of BiZO NRs as an excellent electron acceptor for fabrication of hybrid optoelectronic devices.