Behavior of a GaSb (100) Surface in the Presence of H 2 O 2 in Wet-Etching Solutions
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| Veröffentlicht in: | Journal of physical chemistry. C 2015-11, Vol.119 (44), p.24774-24780 |
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| Sprache: | eng |
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| container_end_page | 24780 |
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| container_issue | 44 |
| container_start_page | 24774 |
| container_title | Journal of physical chemistry. C |
| container_volume | 119 |
| creator | Seo, Dongwan Lee, Seunghyo Lim, Sangwoo |
| description | |
| doi_str_mv | 10.1021/acs.jpcc.5b04250 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 1932-7447 |
| ispartof | Journal of physical chemistry. C, 2015-11, Vol.119 (44), p.24774-24780 |
| issn | 1932-7447 1932-7455 |
| language | eng |
| recordid | cdi_crossref_primary_10_1021_acs_jpcc_5b04250 |
| source | ACS Publications |
| title | Behavior of a GaSb (100) Surface in the Presence of H 2 O 2 in Wet-Etching Solutions |
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