Asymmetric Band Alignments and Remark Defect Tolerability at the Interface of High- k Dielectric Sb 2 O 3 and 2D Semiconductor MoS 2

Asymmetric Band Alignments and Remark Defect Tolerability at the Interface of High- k Dielectric Sb 2 O 3 and 2D Semiconductor MoS 2

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of physical chemistry. C 2024-06, Vol.128 (25), p.10627-10633
Hauptverfasser: Liu, Qin, Zuo, Yang, He, Jingyu, Zeng, Minggang, Yang, Tong, Zhou, Jun, Yang, Yulin, Song, Ting Ting, Wang, Shijie, Yang, Ming
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 10633
container_issue 25
container_start_page 10627
container_title Journal of physical chemistry. C
container_volume 128
creator Liu, Qin
Zuo, Yang
He, Jingyu
Zeng, Minggang
Yang, Tong
Zhou, Jun
Yang, Yulin
Song, Ting Ting
Wang, Shijie
Yang, Ming
description
doi_str_mv 10.1021/acs.jpcc.4c01323
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1021_acs_jpcc_4c01323</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1021_acs_jpcc_4c01323</sourcerecordid><originalsourceid>FETCH-crossref_primary_10_1021_acs_jpcc_4c013233</originalsourceid><addsrcrecordid>eNqdj7tOAzEURC0EEuHRU94f2MWPXUWUgYBCgZDY9JbjXCcOfkS2Kbbnw_GiiA-gmjvSzOgeQu4YbRnl7F7p3B6OWredpkxwcUZm7EHwZt71_fnf3c0vyVXOB0p7UWMz8r3Io_dYktXwqMIWFs7ugsdQMkz2A71Kn7BEg7rAOjpMamOdLSOoAmWP8BoKJqM0QjSwsrt9AzVv0dXCtDpsgMM7iN85voQBvdUxbL90iQne4gD8hlwY5TLenvSa0Jfn9dOq0SnmnNDIY7L1j1EyKidaWWnlRCtPtOIflR9paF-A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Asymmetric Band Alignments and Remark Defect Tolerability at the Interface of High- k Dielectric Sb 2 O 3 and 2D Semiconductor MoS 2</title><source>American Chemical Society Journals</source><creator>Liu, Qin ; Zuo, Yang ; He, Jingyu ; Zeng, Minggang ; Yang, Tong ; Zhou, Jun ; Yang, Yulin ; Song, Ting Ting ; Wang, Shijie ; Yang, Ming</creator><creatorcontrib>Liu, Qin ; Zuo, Yang ; He, Jingyu ; Zeng, Minggang ; Yang, Tong ; Zhou, Jun ; Yang, Yulin ; Song, Ting Ting ; Wang, Shijie ; Yang, Ming</creatorcontrib><identifier>ISSN: 1932-7447</identifier><identifier>EISSN: 1932-7455</identifier><identifier>DOI: 10.1021/acs.jpcc.4c01323</identifier><language>eng</language><ispartof>Journal of physical chemistry. C, 2024-06, Vol.128 (25), p.10627-10633</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-crossref_primary_10_1021_acs_jpcc_4c013233</cites><orcidid>0000-0002-0876-1221 ; 0000-0001-6312-3524 ; 0000-0002-5505-7616</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,2751,27903,27904</link.rule.ids></links><search><creatorcontrib>Liu, Qin</creatorcontrib><creatorcontrib>Zuo, Yang</creatorcontrib><creatorcontrib>He, Jingyu</creatorcontrib><creatorcontrib>Zeng, Minggang</creatorcontrib><creatorcontrib>Yang, Tong</creatorcontrib><creatorcontrib>Zhou, Jun</creatorcontrib><creatorcontrib>Yang, Yulin</creatorcontrib><creatorcontrib>Song, Ting Ting</creatorcontrib><creatorcontrib>Wang, Shijie</creatorcontrib><creatorcontrib>Yang, Ming</creatorcontrib><title>Asymmetric Band Alignments and Remark Defect Tolerability at the Interface of High- k Dielectric Sb 2 O 3 and 2D Semiconductor MoS 2</title><title>Journal of physical chemistry. C</title><issn>1932-7447</issn><issn>1932-7455</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNqdj7tOAzEURC0EEuHRU94f2MWPXUWUgYBCgZDY9JbjXCcOfkS2Kbbnw_GiiA-gmjvSzOgeQu4YbRnl7F7p3B6OWredpkxwcUZm7EHwZt71_fnf3c0vyVXOB0p7UWMz8r3Io_dYktXwqMIWFs7ugsdQMkz2A71Kn7BEg7rAOjpMamOdLSOoAmWP8BoKJqM0QjSwsrt9AzVv0dXCtDpsgMM7iN85voQBvdUxbL90iQne4gD8hlwY5TLenvSa0Jfn9dOq0SnmnNDIY7L1j1EyKidaWWnlRCtPtOIflR9paF-A</recordid><startdate>20240627</startdate><enddate>20240627</enddate><creator>Liu, Qin</creator><creator>Zuo, Yang</creator><creator>He, Jingyu</creator><creator>Zeng, Minggang</creator><creator>Yang, Tong</creator><creator>Zhou, Jun</creator><creator>Yang, Yulin</creator><creator>Song, Ting Ting</creator><creator>Wang, Shijie</creator><creator>Yang, Ming</creator><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-0876-1221</orcidid><orcidid>https://orcid.org/0000-0001-6312-3524</orcidid><orcidid>https://orcid.org/0000-0002-5505-7616</orcidid></search><sort><creationdate>20240627</creationdate><title>Asymmetric Band Alignments and Remark Defect Tolerability at the Interface of High- k Dielectric Sb 2 O 3 and 2D Semiconductor MoS 2</title><author>Liu, Qin ; Zuo, Yang ; He, Jingyu ; Zeng, Minggang ; Yang, Tong ; Zhou, Jun ; Yang, Yulin ; Song, Ting Ting ; Wang, Shijie ; Yang, Ming</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-crossref_primary_10_1021_acs_jpcc_4c013233</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Qin</creatorcontrib><creatorcontrib>Zuo, Yang</creatorcontrib><creatorcontrib>He, Jingyu</creatorcontrib><creatorcontrib>Zeng, Minggang</creatorcontrib><creatorcontrib>Yang, Tong</creatorcontrib><creatorcontrib>Zhou, Jun</creatorcontrib><creatorcontrib>Yang, Yulin</creatorcontrib><creatorcontrib>Song, Ting Ting</creatorcontrib><creatorcontrib>Wang, Shijie</creatorcontrib><creatorcontrib>Yang, Ming</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of physical chemistry. C</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Qin</au><au>Zuo, Yang</au><au>He, Jingyu</au><au>Zeng, Minggang</au><au>Yang, Tong</au><au>Zhou, Jun</au><au>Yang, Yulin</au><au>Song, Ting Ting</au><au>Wang, Shijie</au><au>Yang, Ming</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Asymmetric Band Alignments and Remark Defect Tolerability at the Interface of High- k Dielectric Sb 2 O 3 and 2D Semiconductor MoS 2</atitle><jtitle>Journal of physical chemistry. C</jtitle><date>2024-06-27</date><risdate>2024</risdate><volume>128</volume><issue>25</issue><spage>10627</spage><epage>10633</epage><pages>10627-10633</pages><issn>1932-7447</issn><eissn>1932-7455</eissn><doi>10.1021/acs.jpcc.4c01323</doi><orcidid>https://orcid.org/0000-0002-0876-1221</orcidid><orcidid>https://orcid.org/0000-0001-6312-3524</orcidid><orcidid>https://orcid.org/0000-0002-5505-7616</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 1932-7447
ispartof Journal of physical chemistry. C, 2024-06, Vol.128 (25), p.10627-10633
issn 1932-7447
1932-7455
language eng
recordid cdi_crossref_primary_10_1021_acs_jpcc_4c01323
source American Chemical Society Journals
title Asymmetric Band Alignments and Remark Defect Tolerability at the Interface of High- k Dielectric Sb 2 O 3 and 2D Semiconductor MoS 2
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T00%3A51%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Asymmetric%20Band%20Alignments%20and%20Remark%20Defect%20Tolerability%20at%20the%20Interface%20of%20High-%20k%20Dielectric%20Sb%202%20O%203%20and%202D%20Semiconductor%20MoS%202&rft.jtitle=Journal%20of%20physical%20chemistry.%20C&rft.au=Liu,%20Qin&rft.date=2024-06-27&rft.volume=128&rft.issue=25&rft.spage=10627&rft.epage=10633&rft.pages=10627-10633&rft.issn=1932-7447&rft.eissn=1932-7455&rft_id=info:doi/10.1021/acs.jpcc.4c01323&rft_dat=%3Ccrossref%3E10_1021_acs_jpcc_4c01323%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true