Aqueous Solution-Processed Boron-Doped Gallium Oxide Dielectrics for High-Performance Thin-Film Transistors

In this paper, we report aqueous solution-processed boron-doped gallium oxide dielectric thin films for high-performance oxide thin-film transistors. The role of B incorporation on the microstructural, chemical, optical, and dielectric characteristics of Ga2O3 is comprehensively investigated. The combined results show that suitable B addition could effectively suppress oxygen vacancy related defects and densify the Ga2O3 film, thereby effectively reducing the leakage current and enhancing the dielectric properties of Ga2O3. Compared with pristine Ga2O3-gated TFTs, the In2O3/GaBO (10 at% B) TFTs have a significant improvement in devices performance, including the mobility increasing from 10 to 17 cm2/(V s) and the on–off current ratio improving from 2.5 × 105 to 1.3 × 106. Our study represents an important step toward the development of next generation large-area advanced optoelectronics.