Correlated Molecular Orbital Theory Study of the Al + CO 2 Reaction

Density functional theory (DFT) and correlated molecular orbital electronic structure calculations were used to study the Al + CO → AlO + CO reaction on the electronic ground-state potential-energy surface (PES). Geometries were optimized using DFT (M11/jun-cc-pV(Q+d)Z) and more accurate energies we...

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Veröffentlicht in:The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory Molecules, spectroscopy, kinetics, environment, & general theory, 2018-01, Vol.122 (3), p.859-868
Hauptverfasser: Chitsazi, Rezvan, Veals, Jeffrey D, Shi, Yi, Sewell, Tommy
Format: Artikel
Sprache:eng
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Zusammenfassung:Density functional theory (DFT) and correlated molecular orbital electronic structure calculations were used to study the Al + CO → AlO + CO reaction on the electronic ground-state potential-energy surface (PES). Geometries were optimized using DFT (M11/jun-cc-pV(Q+d)Z) and more accurate energies were obtained using the composite Weizmann-1 theory with Brueckner doubles (W1BD). The results comprise the most complete, most systematic characterization of the Al + CO reaction surface to date and are based on consistent application of high-level methods for all stationary points identified. The pathways from Al + CO to AlO + CO on the electronic ground-state PES all involve formation of one or more stable AlCO complexes denoted η-AlCO , trans-AlCO , and C -AlCO , among which η-AlCO and C -AlCO are the least and most stable, respectively. We report a new minimum-energy pathway for the overall reaction, namely formation of η-AlCO from reactants and dissociation of that same complex to products via a bond-insertion reaction that passes through a fourth (weakly metastable) AlCO complex denoted cis-OAlCO. Natural Bond Orbital analysis was applied to study trends in charge distribution and the degree of charge transfer in key structures along the minimum-energy pathway. The process of aluminum insertion into CO is discussed in the context of analogous processes for boron and first-row transition metals.
ISSN:1089-5639
1520-5215
DOI:10.1021/acs.jpca.7b11443