HCl Flow-Induced Phase Change of α-, β-, and ε-Ga 2 O 3 Films Grown by MOCVD

HCl Flow-Induced Phase Change of α-, β-, and ε-Ga 2 O 3 Films Grown by MOCVD

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Veröffentlicht in:Crystal growth & design 2018-04, Vol.18 (4), p.2370-2376
Hauptverfasser: Sun, Haiding, Li, Kuang-Hui, Castanedo, C. G. Torres, Okur, Serdal, Tompa, Gary S., Salagaj, Tom, Lopatin, Sergei, Genovese, Alessandro, Li, Xiaohang
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container_issue 4
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container_title Crystal growth & design
container_volume 18
creator Sun, Haiding
Li, Kuang-Hui
Castanedo, C. G. Torres
Okur, Serdal
Tompa, Gary S.
Salagaj, Tom
Lopatin, Sergei
Genovese, Alessandro
Li, Xiaohang
description
doi_str_mv 10.1021/acs.cgd.7b01791
format Article
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title HCl Flow-Induced Phase Change of α-, β-, and ε-Ga 2 O 3 Films Grown by MOCVD
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