Three-Dimensional Cross-Linked Arrays of Comb-Like ZnO: Epitaxial Growth and Modulation

The method to construct the three-dimensional (3D) ordered nanostructure of ZnO for improving its performance has attracted considerable attention and remains a challenging issue, which has theoretical and practical implications for nanoscale applications such as optoelectronics and gas sensors. Her...

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Veröffentlicht in:Crystal growth & design 2023-10, Vol.23 (10), p.7276-7284
Hauptverfasser: Ji, Nanzheng, Chen, He, Wang, Lilin, Lee, Chun-Yu, Shen, Kun-Ching, Sun, Shujing, Chen, Chenlong
Format: Artikel
Sprache:eng
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Zusammenfassung:The method to construct the three-dimensional (3D) ordered nanostructure of ZnO for improving its performance has attracted considerable attention and remains a challenging issue, which has theoretical and practical implications for nanoscale applications such as optoelectronics and gas sensors. Herein, we demonstrate a straightforward chemical vapor deposition (CVD) technique for the epitaxial growth of 3D cross-linked comb-like ZnO arrays on r-plane sapphire substrates. The morphological, structural, and optical properties of the as-synthesized samples were examined using X-ray diffraction, field emission scanning electron microscopy, field emission transmission electron microscopy, Raman spectroscopy, UV–vis spectroscopy, and photoluminescence spectroscopy. A cooperative growth mechanism is suggested to construct 3D cross-linked comb-like ZnO arrays: The supersaturated alloy forms a backbone of oblique nanosails along [101̅0] by the Au-assisted catalytic vapor–liquid–solid (VLS) growth mechanism and the inevitable vapor–solid (VS) lateral extension growth process; simultaneously discrete nanoteeth are grown along the unilateral c-direction [0001] by the Zn self-catalytic VLS mechanism, culminating in a 3D cross-linked array of comb-like ZnO. The development of such a unique 3D cross-linked array allows the exploration of performance in gas-sensitive devices, optoelectronics, and quantum electrical information applications.
ISSN:1528-7483
1528-7505
DOI:10.1021/acs.cgd.3c00665