Molecular Abundances in IRC+10216

Molecular Abundances in IRC+10216

The observed molecular column-densities in IRC +10216 can be matched by chemical-equilibrium calculations for T∼1250°K, P∼100 dyn cm -2 and no graphite grain formation. Condensation of silicon carbide into grains may explain the low observed abundances of SiO and SiS.

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Veröffentlicht in:Symposium - International Astronomical Union 1980, Vol.87, p.497-502
Hauptverfasser: McCabe, E.M., Smith, R. Connon, Clegg, R.E.S.
Format: Artikel
Sprache:eng
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Zusammenfassung:The observed molecular column-densities in IRC +10216 can be matched by chemical-equilibrium calculations for T∼1250°K, P∼100 dyn cm -2 and no graphite grain formation. Condensation of silicon carbide into grains may explain the low observed abundances of SiO and SiS.
ISSN:0074-1809
DOI:10.1017/S0074180900073125