Sub-cell characterization of two-terminal perovskite/silicon tandem solar cells

Although significant improvements in performance have been reported for monolithic perovskite/silicon tandem solar cells (PVSK/Si TSCs), the lack of simple electrical characterization methods impedes further development of monolithic TSCs. In this article, we report comprehensive electrical characte...

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Veröffentlicht in:Cell reports physical science 2022-10, Vol.3 (10), p.101076, Article 101076
Hauptverfasser: Park, Jae Hyun, Ji, Su Geun, Park, Ik Jae, Hwang, Sun Kyung, Lim, Hyun Woo, Kim, Jin Young
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Sprache:eng
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Zusammenfassung:Although significant improvements in performance have been reported for monolithic perovskite/silicon tandem solar cells (PVSK/Si TSCs), the lack of simple electrical characterization methods impedes further development of monolithic TSCs. In this article, we report comprehensive electrical characterization methods that can accurately and easily analyze the sub-cells of two-terminal PVSK/Si TSCs. Using a highly efficient three-terminal PVSK/Si TSC conceived for the sub-cell analysis, fundamental electrical characterization methods, such as J-V characteristics, external quantum efficiency, impedance spectroscopy, and thermal admittance spectroscopy, are investigated to suggest a characterization platform for the sub-cell analysis of monolithic two-terminal PVSK/Si TSCs. [Display omitted] •Sub-cells of monolithic perovskite/silicon tandem solar cells are characterized•Sub-cell-selective light bias enables simple nondestructive analysis•3-T device is used to validate the suggested methods•J-V, EQE, EIS, and TAS of the sub-cells are investigated Park et al. report sub-cell characterization methods for monolithic perovskite/silicon tandem solar cells. By using sub-cell-selective light biases and highly efficient monolithic three-terminal perovskite/silicon tandem solar cells, the J-V characteristics, external quantum efficiency, impedance analysis, and thermal admittance spectroscopy of the sub-cells are analyzed.
ISSN:2666-3864
2666-3864
DOI:10.1016/j.xcrp.2022.101076