Influence of indium and arsenic balance on the Raman spectra of GaInAsSb alloys

Influence of indium and arsenic balance on the Raman spectra of GaInAsSb alloys

Raman spectra of GaxIn1−xAsySb1−y alloy with x = 79–95 % and y = 5–25 % have been studied. Strong correlation of main LO1 and LO2 mode splitting with arsenic concentration is found. Model of Raman bands origin based on phase separation observed by structural studies is suggested. Ways of practical i...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Vibrational spectroscopy 2022-11, Vol.123, p.103451, Article 103451
Hauptverfasser: Vlasov, A.S., Levin, R.V.
Format: Artikel
Sprache:eng
Schlagworte:
GaInAsSb
MOVPE
Phase separation
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Raman spectra of GaxIn1−xAsySb1−y alloy with x = 79–95 % and y = 5–25 % have been studied. Strong correlation of main LO1 and LO2 mode splitting with arsenic concentration is found. Model of Raman bands origin based on phase separation observed by structural studies is suggested. Ways of practical implementation of Raman spectroscopy for alloy composition determination are presented.
ISSN:0924-2031
1873-3697
DOI:10.1016/j.vibspec.2022.103451