Synthesis, phase transition and semiconductor properties of bi-tetrabutylphosphonium hexachlorostannate

The single crystals of bi-tetrabutylphosphonium hexachlorostannate were grown by solvent evaporation method and characterized by X-ray powder diffraction, Raman spectroscopy, and optical study. The X-ray powder diffraction indicates that it was crystallized in the monoclinic system, with the C2/c sp...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Vibrational spectroscopy 2022-05, Vol.120, p.103370, Article 103370
Hauptverfasser: Mbarek, I., Ben Gzaiel, M., Oueslati, A., Gargouri, M.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The single crystals of bi-tetrabutylphosphonium hexachlorostannate were grown by solvent evaporation method and characterized by X-ray powder diffraction, Raman spectroscopy, and optical study. The X-ray powder diffraction indicates that it was crystallized in the monoclinic system, with the C2/c space group. Besides, temperature-controlled X-ray diffraction shows that the [P(C4H9)4]2SnCl6 compound indicates the presence of two-phase transitions detected at 388 and 403 K. The evolution of Raman line shifts, “ν”, and the half-width “Δν”, versus temperature show some singularities associated with the transitions, suggesting the important role of the anionic parts ((SnCl6)2-). Besides, the results of the Raman study confirm the conclusion drawn from the X-ray powder diffraction measurements that the phase transitions are located near 388 K and 403 K. Furthermore, an optical absorption measurement confirms the semiconductor nature with a band gap equal to 3.46 eV. [Display omitted] •The solid belongs to monoclinic crystal system with a C2/c space group.•Temperature-controlled X-ray diffraction shows two phase transitions.•The results of the Raman study confirm the main role of the anionic parts.•The optical absorption measurement confirms the semiconductor nature.
ISSN:0924-2031
1873-3697
DOI:10.1016/j.vibspec.2022.103370