Growth and phase transition properties of Ta-doped VO2 single crystal microtubes
Ta-doped VO2 single crystal microtubes with rectangular cross-sections were grown by a thermal oxidation process from V–Ta alloy foils in air. Characterized using X-ray diffraction, scanning electron microscopy, transmission electron microscopy revealed their morphology as hollow, rod-like single cr...
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Veröffentlicht in: | Vacuum 2024-04, Vol.222, p.113059, Article 113059 |
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Sprache: | eng |
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Zusammenfassung: | Ta-doped VO2 single crystal microtubes with rectangular cross-sections were grown by a thermal oxidation process from V–Ta alloy foils in air. Characterized using X-ray diffraction, scanning electron microscopy, transmission electron microscopy revealed their morphology as hollow, rod-like single crystals. Phase transition examinations used differential scanning calorimetry demonstrated that Ta doping can effectively decrease the metal-insulator transition temperatures of VO2 by approximately 9.8 °C/at. % Ta. The phase transition behavior and growth mechanism of Ta-doped VO2 single crystal microtubes are also elucidated.
•Ta-doped VO2 single crystal microtubes were fabricated.•Ta doping can decrease the metal-insulator transition temperature of VO2 by approximately 9.8 °C/at. % Ta.•The phase transition route and mechanism of Ta-doped VO2 single crystal microtubes are revealed. |
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ISSN: | 0042-207X 1879-2715 |
DOI: | 10.1016/j.vacuum.2024.113059 |