Study on the effect of sputtering pressure on the physical properties of InN films on ITO substrate and the dependence of carrier transport characteristics of Li-doped p-NiO/n-InN heterojunction on the environmental temperature

Study on the effect of sputtering pressure on the physical properties of InN films on ITO substrate and the dependence of carrier transport characteristics of Li-doped p-NiO/n-InN heterojunction on the environmental temperature

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Veröffentlicht in:Vacuum 2024-02, Vol.220, p.112833, Article 112833
Hauptverfasser: He, Zhen, Huang, Haoxuan, Huang, Jiahui, Xiang, Guojiao, Zhang, Jinming, Yue, Zhiang, Zhang, Xian, Wang, Yongqi, Ding, Jinwei, Li, Jingzhe, He, Hangyu, Wang, Lukai, Li, Jie, Zhao, Yang, Wang, Hui
Format: Artikel
Sprache:eng
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ISSN:0042-207X
DOI:10.1016/j.vacuum.2023.112833