Study on the preparation of InN films under different substrates and nitrogen-argon flow ratios and the effect of operating temperature on carrier transport in p-NiO/n-InN heterojunctions

Study on the preparation of InN films under different substrates and nitrogen-argon flow ratios and the effect of operating temperature on carrier transport in p-NiO/n-InN heterojunctions

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Veröffentlicht in:Vacuum 2024-02, Vol.220, p.112805, Article 112805
Hauptverfasser: Zhang, Jinming, Peng, Wenbo, Zhou, Yijian, Xiang, Guojiao, Liu, Yue, Zhang, Jiahui, Zhang, Xian, Yue, Zhiang, He, Hangyu, Wang, Lukai, Wang, Yang, Wang, Hui, Zhao, Yang
Format: Artikel
Sprache:eng
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ISSN:0042-207X
DOI:10.1016/j.vacuum.2023.112805